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Effects of mass, energy and temperature on amorphization in ion implanted Ge2Sb2Te5 thin films

Published online by Cambridge University Press:  01 February 2011

Riccardo De Bastiani ,
Alberto Maria Piro ,
Salvatore Lombardo ,
Maria Grazia Grimaldi  and
Emanuele Rimini
Riccardo De Bastiani
Affiliation:
riccardo.debastiani@ct.infn.it, CNR-IMM and Dipartimento di fisica ed Astronomia, Dipartimento di fisica ed Astronomia, Via S. Sofia 64, Catania, 95123, Italy, +390963785352
Alberto Maria Piro
Affiliation:
alberto.piro@ct.infn.it, MATIS CNR-INFM, Dipartimento di Fisica ed Astronomia, Universitá di Catania, 64 via S.Sofia, Catania, 95123, Italy
Salvatore Lombardo
Affiliation:
salvatore.lombardo@cnr.imm.it, IMM-CNR, Catania, Italy
Maria Grazia Grimaldi
Affiliation:
mariagrazia.grimaldi@ct.infn.it, MATIS CNR-INFM, Dipartimento di Fisica ed Astronomia, Universitá di Catania, 64 via S.Sofia, Catania, 95123, Italy
Emanuele Rimini
Affiliation:
emanuele.rimini@ct.infn.it, IMM-CNR, Catania, Italy
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Abstract

The paper reports on the amorphization kinetics of chalcogenides ternary alloy induced by Ar or Sb ion irradiation. The reflectivity data, obtained “in situ” during irradiation, allow a description of the amorphization process in terms of a threshold fluence. The results demonstrate that amorphization is caused by the elastic collisions of the projectiles with target nuclei. The influence of the ion mass and energy, of the target temperature in the amorphization is also reported.

Keywords

ion-implantationamorphousRutherford backscattering (RBS)

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I11-09
Copyright
Copyright © Materials Research Society 2007

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