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Effects of Hydrogen Radicals on the Composition and Hydrogen Bonding of Amorphous Silicon-Germanium Thin Films

Published online by Cambridge University Press:  25 February 2011

D. E. Albright ,
C. M. Fortmann  and
T. W. F. Russell
D. E. Albright
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716
C. M. Fortmann
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716
T. W. F. Russell
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716
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Abstract

A reaction engineering model of the mercury sensitized photochemical vapor deposition of amorphous silicon-germanium thin films is used in conjunction with experimental results to describe the role of hydrogen radical reactions in determining film composition, hydrogen bonding and microcrystallinity. Selective removal of silicon from the film by hydrogen radicals is shown to increase with decreasing temperature, raising the germanium content of films in hydrogen diluted depositions below 2 torr. Etching of a-Ge:H by hydrogen radicals is determined to be nearly two orders of magnitude slower than that of a-Si:H. Hydrogen radicals are also shown to promote microcrystallinity by selectively removing amorphous phase silicon and bonded hydrogen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 521
Copyright
Copyright © Materials Research Society 1989

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References

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