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Effects of Double-Implant on the Epitaxial Growth of Amorphous Silicon

Published online by Cambridge University Press:  25 February 2011

L.J. Chen  and
C.W. Nieh
L.J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, ROC.
C.W. Nieh
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, ROC.
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Abstract

Investigation has been made on the effects of double implant of BF2+−As+, BF2+−P+, B+−As+ and B+−P+ on the thermal annealing behaviors of silicon. For specimens with As+ or P+ as the major dopants, the annealing behaviors were similar to those singly implanted with As+ or P+. For samples with BF2+ or B+ as the major impurities, drastic changes in annealing characteristics were found in comparison with BF2+ or B+ single implant specimens. High density twins, including primary twins on all four {111{ planes and twelve types of secondary twins were observed in BF2+−As+ and BF2+−P+ double implant samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 353
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1. Csepregi, L., Kennedy, E.F., Gallagher, T.J., Mayer, J.W., and Sigmon, T.W., J. Appl. Phys. 48, 4234 (1977).Google Scholar
2. Kennedy, E.F., Csepregi, L., Mayer, J.W., and Sigmon, T.W., J. Appl. Phys. 48, 4241 (1977).Google Scholar
3. Suni, I., Göltz, G., Grimaldi, M.G., Nicolet, M-A, and Lau, S.S., Appl. Phys. 40, 269 (1982).Google Scholar
4. Ohdomari, I. and Onoda, N., Phil. Mag. 35, 1373 (1977).Google Scholar
5. Rechtin, M.D., Pronko, P.P., Foti, G., Csepregi, L., Kennedy, E.F., and Mayer, J.W., Phil. Mag. A, 37, 605 (1978).Google Scholar
6. Tamura, M., Phil. Mag. 35, 663 (1977).Google Scholar
7. Wittmer, M., Roth, J., Revesz, P., and Mayer, J.W., J. Appl. Phys. 49, 5207 (1978).Google Scholar
8. Komarov, E.F., Solov'yev, V.S., Tishkov, V.S., and Yu Shiryayav, S., Rad. Eff. 69, 179 (1983).Google Scholar
9. Nakamura, G.: in Ion Implantation in Semiconductor, S. Namba, ed. 557 (1975).Google Scholar
10. Chen, L.J., and Wu, I.W., J. of Appl. Phys. 52, 3310 (1981).Google Scholar
11. Chen, L.J., Wu, Y.J., and Wu, I.W., J. of Appl. Phys. 52, 3520 (1981).Google Scholar