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The Effects of Biasing on the Optical and Electrical Properties of RF Sputtered VO2

Published online by Cambridge University Press:  21 February 2011

A. Razavi ,
T. Hughes  and
L. Bobyak
A. Razavi
Affiliation:
School of Engineering and Physical Sciences Materials Processing Center, Wilkes College, Wilkes-Barre, PA 18766
T. Hughes
Affiliation:
School of Engineering and Physical Sciences Materials Processing Center, Wilkes College, Wilkes-Barre, PA 18766
L. Bobyak
Affiliation:
School of Engineering and Physical Sciences Materials Processing Center, Wilkes College, Wilkes-Barre, PA 18766
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Abstract

Vanadium dioxide was deposited on sapphire substrates by RF reactive sputtering. Biasing of substrates during deposition was used to alter both resistivity and infrared transmission of VO2 thin films. It has been found that as the negative dc bias potential is increased, films in the metallic state show an increased transmittance of IR wavelengths between 2.5 and 6 μm. Also, the resistivity ratio of the semiconductor to metal phase as a function of bias potential is found to reach a maximum value after which further increases in bias cause degradation of electrical properties. X-ray diffraction analysis was used to study film composition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 152: Symposium H – Optical Materials: Processing and Science , 1989 , 209
Copyright
Copyright © Materials Research Society 1989

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References

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