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Effectiveness of Nitride Diffusion Barriers in a Self-Encapsulated Copper-Based Metallization.

Published online by Cambridge University Press:  25 February 2011

D. Adams ,
R.L. Spreitzer ,
S.W. Russell ,
N.D. Theodore ,
T.L. Alford  and
J.W. Mayer
D. Adams
Affiliation:
Department of Chemical, Bio and Materials Engineering, Arizona State University, AZ, 85287 - 6006.
R.L. Spreitzer
Affiliation:
Department of Chemical, Bio and Materials Engineering, Arizona State University, AZ, 85287 - 6006.
S.W. Russell
Affiliation:
Department of Chemical, Bio and Materials Engineering, Arizona State University, AZ, 85287 - 6006.
N.D. Theodore
Affiliation:
Department of Chemical, Bio and Materials Engineering, Arizona State University, AZ, 85287 - 6006.
T.L. Alford
Affiliation:
Department of Chemical, Bio and Materials Engineering, Arizona State University, AZ, 85287 - 6006.
J.W. Mayer
Affiliation:
Center of Solid State Science, Arizona State University, AZ, 85287-1704.
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Abstract

Cu(Ti 27 at. %) and Cu(Cr 26 at. %) codeposited on silicon dioxide substrates were annealed in a flowing NH3 ambient at 400 - 600°C for 30 min. The Ti segregates to both the surface to form a TiN(O) layer and to the alloy/SiO2 interface to form a Ti-oxide/Ti-silicide bilayer. The Cr seems to migrate only to the free surface to form a CrNx layer. A 45 nm - thick Al film was deposited after nitridation, whereupon a second anneal was performed to evaluate these nitride layers as diffusion barriers. It was found that the Ti-nitride was stable up to 500°C as compared to Cr-nitride at 600°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 231
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1 Miyazaki, H., Hinode, K., Homma, Y. and Mukai, K., Japan. J. Appl. Phys.,48(1987)329.Google Scholar
2 Li, J., Mayer, J.W., Shacham-Diamand, Y. and Colgan, E.G., Appl. Phys. Lett., 60(1992)2983.Google Scholar
3 LaFontaine, W.R. and Li, C.Y., Mat. Res. Soc. Symp. Proc., 203(1991)163.Google Scholar
4 Li, J., Mayer, J.W. and Colgan, E.G., J. Appl. Phys., 70(1991)2820.Google Scholar
5 Wang, S.Q. and Mayer, J.W., J. Appl. Phys., 679(1990)2932.Google Scholar
6 Olowolafe, J., Li, J., Mayer, J.W. and Colgan, E.G., Appl. Phys. Lett., 58, (1191)469.Google Scholar