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The Effect of Substrate Surface Orientation and Epilayer Thickness on Ingaas/Gaas Epilayer Tilt and Tilt Direction

Published online by Cambridge University Press:  25 February 2011

J.C.P. Chang  and
K.L. Kavanagh
J.C.P. Chang
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, California 92093–0407
K.L. Kavanagh
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, California 92093–0407
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Abstract

Epilayer tilt about an in-plane axis has been measured for a number of InGaAs/GaAs interfaces grown by solid source molecular beam epitaxy on (001) substrates cut nominally flat or cut 2 degrees towards the <010> or <111> direction. It is found that a much larger tilt develops in epilayers grown on off oriented wafers although a comparable degree of strain was relaxed. The tilt is a function of epilayer thickness for thicknesses exceeding a second critical thickness which we associate with the onset of relaxation by predominantly dislocation multiplication processes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 457
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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