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Effect of Stress and Impurities on Preferential Amorphization on Grain Boundaries in Polycrystalline Silicon

Published online by Cambridge University Press:  15 February 2011

Mitsuhiro Takeda ,
Somei Ohnuki ,
Seiichi Watanabe ,
Hiroaki Abe ,
Hiroshi Naramoto ,
Paul R. Okamoto  and
Nigh Q. Lam
Mitsuhiro Takeda
Affiliation:
Dept. Mater. Sci., Fac. Engin., Hokkaido Univ.N-13, W-18, Kita-ku, Sapporo 060-8628, Japan, take@loam-ms.eng. hokudai.ac.jp
Somei Ohnuki
Affiliation:
Dept. Mater. Sci., Fac. Engin., Hokkaido Univ.N-13, W-18, Kita-ku, Sapporo 060-8628, Japan
Seiichi Watanabe
Affiliation:
Dept. Mater. Sci., Fac. Engin., Hokkaido Univ.N-13, W-18, Kita-ku, Sapporo 060-8628, Japan
Hiroaki Abe
Affiliation:
JAERI Takasaki, Watanuki-chou, Takasaki 370-1233, Japan
Hiroshi Naramoto
Affiliation:
JAERI Takasaki, Watanuki-chou, Takasaki 370-1233, Japan
Paul R. Okamoto
Affiliation:
ANL, Argonne, IL 60439, USA
Nigh Q. Lam
Affiliation:
ANL, Argonne, IL 60439, USA
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Abstract

Clarifying the local amorphization on the grain boundaries, the in-situ observation during ion-irradiation was carried out for poly-crystalline Si film. The critical dose of amorphous formation increased exponentially with increasing temperature, where the local amorphization was developed at middle temperature. The critical dose was affected by the doped impurity and the grain size. The preferential amorphization on and near grain boundaries had two processes; first stage with rapid growth rate and second stage with almost constant growth rate. The importance of stress was demonstrated from the acceleration due to the stress on the first stage of amorphization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 540: Symposium N / Microstructural Processes in Irradiated Materials , 1998 , 37
Copyright
Copyright © Materials Research Society 1999

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References

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