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Effect of Plasma Treatment on Crystallization Behavior of Amorphous Silicon Films

Published online by Cambridge University Press:  10 February 2011

K. Pangal ,
J.C. Sturm  and
S. Wagner
K. Pangal
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
J.C. Sturm
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
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Abstract

The crystallization of amorphous silicon (a-Si:H) deposited by plasma enhanced chemical vapor deposition (PECVD) by thermal annealing is of great interest for display and silicon-on-insulator (SOI) technologies, though long anneal times (about 20 hrs) at 600 °C are typically required. We report that a room temperature hydrogen plasma exposure in a parallel plate diode type Reactive Ion Etcher (RIE) can reduce this crystallization time by a factor of five. This plasma enhanced crystallization can be spatially controlled by masking with patterned oxide, so that both amorphous and polycrystalline areas can be realized simultaneously at desired locations. This effect is due to the creation of seed nuclei at the surface, which enhance crystallization rates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 577
Copyright
Copyright © Materials Research Society 1998

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