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Effect of Oxygen on Diamond Deposition in CH4/O2/H2 Gas Mixtures

Published online by Cambridge University Press:  22 February 2011

H. Matsuyama ,
N. Sato  and
H. Kawakami
H. Matsuyama
Affiliation:
Fuji Electric Corporate R&D. Ltd., 2–2–1 Nagasaka Yokosuka 240–01, Japan
N. Sato
Affiliation:
Fuji Electric Corporate R&D. Ltd., 2–2–1 Nagasaka Yokosuka 240–01, Japan
H. Kawakami
Affiliation:
Fuji Electric Corporate R&D. Ltd., 2–2–1 Nagasaka Yokosuka 240–01, Japan
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Abstract

Diamond growth experiments were carried out by a microwave plasma assisted CVD technique in various gas mixtures of CH4(0–100%)/02/H2. The phase diagram obtained by this study shows that a diamond growth region exists. With addition of more than 5% O2 in reactant gases, diamond particles could be included in amorphous or graphitic carbon films even using CH4/O2 gas mixtures. Faceted diamond films were obtained if the oxygen gas concentration [O2] was approximately more than half the methane gas concentration [CH4] ([O2]>[CH4]/2). However, no films were grown when [O2] exceeded half of [CH4] plus 7% ([O2]>[CH4]/2+7%). These results corresponded to the observations by plasma emission spectroscopy. Though oxygen etches carbon films and decomposes methane by forming carbon monoxide, oxygen rarely reacts with hydrogen in a film growth region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 135
Copyright
Copyright © Materials Research Society 1994

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