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The Effect of Nitrogen Ion Damage on the Optical and Electrical Properties of MBE GaN Grown on MOCVD GaN/Sapphire Templates

Published online by Cambridge University Press:  03 September 2012

Alexander P. Young ,
Leonard J. Brillson ,
Yoshiki Naoi  and
Charles W. Tu
Alexander P. Young
Affiliation:
Department of Electrical Engineering, The Ohio-State University, 2015 Neil Avenue, Columbus, OH 43210-1272, U.S.A
Leonard J. Brillson
Affiliation:
Department of Electrical Engineering, The Ohio-State University, 2015 Neil Avenue, Columbus, OH 43210-1272, U.S.A
Yoshiki Naoi
Affiliation:
Department of Electrical Engineering, University of California, San Diego, 9500 Gilman Dr., La Jolla, CA 92093-0407, U.S.A
Charles W. Tu
Affiliation:
Department of Electrical Engineering, University of California, San Diego, 9500 Gilman Dr., La Jolla, CA 92093-0407, U.S.A
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Abstract

We have established a correlation between localized states responsible for mid-gap optical emission and film mobility of GaN grown under different nitrogen conditions. By imposing a deflector voltage at the tip of the plasma source, we varied the ion/neutral flux ratio to determine how N ions affect mid-gap luminescence and electrical mobility. Low energy electron-excited nanometer scale luminescence (LEEN) spectroscopy in ultrahigh vacuum (UHV) showed mid-gap emission intensities in the bulk that decreased in the ratio, 50 : 1.3 : 1 with increasing deflector voltage. Hall measurements indicated over a factor of two increase in mobility, and a factor of 8 decrease in residual charge density with increasing deflector voltage. The correlation of optical and electrical properties with a reduction in N ion flux suggests the primary role of native defects, such as N or Ga vacancies, in the mid-gap emissions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.56
Copyright
Copyright © Materials Research Society 1999

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