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Effect of Nh3/SiH4 Gas Ratios of Top Nitride Layer on Stability and Leakage in a-Si:H Thin Film Transistors

Published online by Cambridge University Press:  10 February 2011

R.V.R. Murthy ,
Q. Ma ,
A. Nathan  and
S.G. Chamberlain
R.V.R. Murthy
Affiliation:
E&CE Department, University of Waterloo, Waterloo, Ontario, Canada N2L 3G1, murthy@venus.uwaterloo.ca
Q. Ma
Affiliation:
E&CE Department, University of Waterloo, Waterloo, Ontario, Canada N2L 3G1, murthy@venus.uwaterloo.ca
A. Nathan
Affiliation:
E&CE Department, University of Waterloo, Waterloo, Ontario, Canada N2L 3G1, murthy@venus.uwaterloo.ca
S.G. Chamberlain
Affiliation:
DALSA Inc., 605 McMurray Rd., Waterloo, Ontario, Canada, N2V 2E9
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Abstract

In this paper, we present measurement results of stability and leakage current characteristics in inverted staggered hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) for different compositions of the top (passivation) nitride (a-SiNx:H). Here, we varied the deposition parameters, i.e., the ammonia (NH3) to silane (SiH4) gas ratio, of the passivation material for fixed composition of the (nitrogen-rich) gate nitride. When stressed with a prolonged gate bias, the observed shift in both threshold voltage (VT) and leakage current was largest in samples where the gas ratio (R = NH3/SiH4) was small. In the samples considered, R varied from 5 to 25. The shift in VT can be attributed to injection of energetic carriers from the a-Si:H and their subsequent trapping in the top a-SiNx:H layer. The trapping is reduced when the layer is nitrogen-rich.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 73
Copyright
Copyright © Materials Research Society 1998

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References

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