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Effect of Molecular Structure of Scavengers on Copper Diffusion Deterrence in Low k Film

Published online by Cambridge University Press:  01 February 2011

Yutaka Nomura ,
Daisuke Ryuzaki  and
Mitsumasa Koyanagi
Yutaka Nomura
Affiliation:
yut-nomura@hitachi-chem.co.jp, Hitachi Chemical Co., Ltd., Research & Development Center, 13-1, Higashi-cho 4-chome, Hitachi-shi, 317-8555, Japan
Daisuke Ryuzaki
Affiliation:
dryuzaki@crl.hitachi.co.jp, Hitachi, Ltd., Central Research Laboratory, kokubunji-shi, 185-8601, Japan
Mitsumasa Koyanagi
Affiliation:
koyanagi@sd.mech.tohoku.ac.jp, Tohoku University, Department of Bioengeering and Robotics, Sendai-shi, 980-8579, Japan
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Abstract

Low k material with high deterrence ability of copper diffusion has been proposed to reduce the effective electrical resistance of copper wirings. Providing organic low k material with deterrence ability was attempted by adding a chemical agent that chemically combines with copper. The insulation lifetime of the low k film with benzotriazole (BTA) as the copper scavenger was about two orders of magnitude higher than that of BTA-free low k film, at the practical electric field strength of 0.1 MV/cm. The copper diffusion deterrence ability was clearly dependent on the ability of the copper scavenger.

Keywords

dielectric propertiesdiffusionCu

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References

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