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The Effect of Ionizing Radiations on the Structural, Electrical and Optical Properties of AIIBVI Polycrystalline Thin Films Used as Solar Cell Materials

Published online by Cambridge University Press:  01 February 2011

Lucian Ion ,
Vlad Andrei Antohe ,
Marian Ghenescu ,
Oana Ghenescu ,
Rosemary Bazavan ,
Mihai Danila ,
Marius Marin Gugiu  and
Stefan Antohe
Lucian Ion
Affiliation:
lucian@solid.fizica.unibuc.ro, University of Bucharest, Faculty of Physics, 405 Atomistilor, Magurele-Ilfov, 077125, Romania
Vlad Andrei Antohe
Affiliation:
vlad_antohe@solid.fizica.unibuc.ro, University of Bucharest, Faculty of Physics, 405 Atomistilor, Magurele-Ilfov, 077125, Romania
Marian Ghenescu
Affiliation:
m_ghenescu@yahoo.com, University of Bucharest, Faculty of Physics, 405 Atomistilor, Magurele-Ilfov, 077125, Romania
Oana Ghenescu
Affiliation:
ghenescu@venus.nipne.ro, University of Bucharest, Faculty of Physics, 405 Atomistilor, Magurele-Ilfov, 077125, Romania
Rosemary Bazavan
Affiliation:
petrerosemary@yahoo.com, University of Bucharest, Faculty of Physics, 405 Atomistilor, Magurele-Ilfov, 077125, Romania
Mihai Danila
Affiliation:
mihaid@imt.ro, National Institute of Research and Development in Microtechnologies, 126A, Erou Iancu Nicolae street, Bucharest, 077190, Romania
Marius Marin Gugiu
Affiliation:
gmarius@tandem.nipne.ro, Horia Hulubei National Institute of Physics and Nuclear Engineering, 407 Atomistilor, Magurele-Ilfov, 077125, Romania
Stefan Antohe
Affiliation:
santohe@solid.fizica.unibuc.ro, University of Bucharest, Faculty of Physics, 405 Atomistilor, Magurele-Ilfov, 077125, Romania, +4021 4574535, +4021 4574535
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Abstract

The effects of irradiation with high-energy protons (3 MeV, up to a fluency of 1013 protons/cm2),on structural, electrical and optical properties of polycrystalline CdS and CdTe thin films have been investigated. XRD investigation has revealed that the films contain wurtzite-type CdS, (001) preferentiallyoriented in the growth direction, and cubic phase CdTe, respectively.The defects induced by ionizing radiations have been studied by thermally stimulated currents spectroscopy (TSC). Parameters of identified defect levels were determined and their possible origin is discussed.

Keywords

electrical propertiesthermally stimulated currentdefects

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1012: Symposium Y – Thin-Film Compound Semiconductor Photovoltaics-2007 , 2007 , 1012-Y12-01
Copyright
Copyright © Materials Research Society 2007

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References

1. Vigil-Galán, O., Arias-Carbajal, A., Mendoza-Pérez, R., Santana-Rodríguez, G., SastreHernández, J., Alonso, J.C., Moreno-García, E., Contreras-Puente, G., and Morales-Acevedo, A., Semicond. Sci. Technol. 20, 819 (2005).Google Scholar
2. Romeo, N., Bosio, A., Tedeschi, R., and Canevari, V., Thin Solid Films, 361-362, 327 (2000).Google Scholar
3. Hartley, A., Irvine, S.J.C., Halliday, D.P., and Potter, M.D.G., Thin Solid Films, 387, 89 (2001).Google Scholar
4. Lourenco, M. A., Yew, Yip Kum, Homewood, K.P., Durose, K., Richter, H., and Bonnet, D., J. Appl. Phys., 82, 1423 (1997).Google Scholar
5. Okamoto, T., Yamada, A., and Konagai, M., Jpn. J. Appl. Phys., 39, 2587 (2000).Google Scholar
6. Chu, T. L. and Chu, S.S., Solid-State Electron., 38, 533 (1995).Google Scholar
7. Mohanchandra, K. P. and Uchi, J., J. Appl. Phys., 84, 306 (1998).Google Scholar
8. Cavallini, A., Fraboni, B., Auricchio, N., Caroli, E., Dusi, W., Chirco, P., Morigi, M. P., Zanarini, M., Hage-Ali, M., Siffert, P., and Fougeres, P., Nucl. Instr.&Methods Phys. Res., 458, 392 (2001).Google Scholar
9. Veeramani, P., Haris, M., Kanjilal, D., Asokan, K., and Babu, S. Moorthy, J. Phys. D: Appl. Phys. 39 2707 (2006).Google Scholar
10. Kulp, B. A. and Kelley, R. H., J. Appl. Phys., 31, 1057 (1960); Phys. Rev. 125, 1865 (1962).Google Scholar
11. Ion, L. and Antohe, S., J. Appl. Phys., 97, 013513 (2005).Google Scholar
12. Fang, Z-Q. and Look, D.C., Appl. Phys. Lett., 59, 48 (1991).Google Scholar
13. Look, D.C., in Semiconductors and Semimetals, vol. 19, edited by Willardson, R.K. and Beer, A.C., (Academic Press, New-York, NY, 1983) p. 75.Google Scholar
14. Look, D.C., Fang, Z.-Q., Hemsky, J.W., and Kengkan, P., Phys. Rev. B55, 2214 (1997).Google Scholar
15. Antohe, S., Ion, L., and Antohe, V. A., J. Optoel. Adv. Mat., 5, 801 (2003).Google Scholar
16. Bourgoin, J. and Lannoo, M., Point Defects in Semiconductors II, Solid State Sciences Series, vol. 35, Springer-Verlag, Berlin, 1983, pp. 220–253.Google Scholar
17. Petritz, R.L., Phys. Rev., 6, 1508 (1956).Google Scholar