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Effect of Initial Growth and Seeding Conditions on Boron Doped Hot Filament Diamond Films

Published online by Cambridge University Press:  22 March 2011

Jerry Zimmer ,
Thomas Hantschel ,
Gerry Chandler ,
Andreas Schulze ,
Wilfried Vandervorst  and
Maria Peralta
Jerry Zimmer
Affiliation:
sp3 Diamond Technologies, 2220 Martin Ave., Santa Clara, CA 95050, U.S.A.
Thomas Hantschel
Affiliation:
IMEC, Kapeldreef 75, B-3001, Leuven, Belgium
Gerry Chandler
Affiliation:
sp3 Diamond Technologies, 2220 Martin Ave., Santa Clara, CA 95050, U.S.A.
Andreas Schulze
Affiliation:
IMEC, Kapeldreef 75, B-3001, Leuven, Belgium
Wilfried Vandervorst
Affiliation:
IMEC, Kapeldreef 75, B-3001, Leuven, Belgium Instituut voor Kern- en Stralingsfysica, K. U. Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium
Maria Peralta
Affiliation:
sp3 Diamond Technologies, 2220 Martin Ave., Santa Clara, CA 95050, U.S.A.
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Abstract

Boron doped CVD diamond has been extensively studied in bulk form but little has been published regarding the effects that the initial seeding and growth conditions can have on the characteristics of the initial layer of diamond. This can have a dramatic effect on the performance of the film in applications ranging from AFM probe tips to electrodes used for water purification and other applications. This paper will examine how initial growth conditions and seeding methods can affect the film interface characteristics of doped diamond grown in hot filament CVD reactors.

Keywords

diamondBchemical vapor deposition (CVD) (deposition)

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1282: Symposium A – Diamond Electronics and Bioelectronics—Fundamentals to Applications IV , 2011 , mrsf10-1282-a15-03
Copyright
Copyright © Materials Research Society 2011

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References

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