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Effect of Fluorine on the Dopant Diffusion of Through-Oxtoe Implanted Boron in Si - a Correlation with Microstructural Defects

Published online by Cambridge University Press:  03 September 2012

J. G. Huang ,
A. Lam  and
R. J. Jaccodine
J. G. Huang
Affiliation:
Sherman Fairchild Center for Solid State Studies, Lehigh University, PA 18015.
A. Lam
Affiliation:
Sherman Fairchild Center for Solid State Studies, Lehigh University, PA 18015.
R. J. Jaccodine
Affiliation:
Sherman Fairchild Center for Solid State Studies, Lehigh University, PA 18015.
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Abstract

In case of boron through-oxide implant, it has been shown that the knocked-in oxygen atoms segregate at initially nucleated dislocation sites during the incubation and no significant junction movement is detected. The trapping of oxygen proceeds up to a certain time at which oxygen-precipitation occurs and this leads to an ejection of excess Si interstitials and further enhancing boron diffusion. However, with fluorine addition we believe that fluorine incorporation in SiO2 and/or SiO2/Si interface not only releases the strain gradient but also suppresses the silicon interstitials ejection and by this means suppresses the oxidation-enhanced boron diffusion. Correlated results of TEM microdefect structures and spreading resistance profiles are used to further support our postulation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 573
Copyright
Copyright © Materials Research Society 1992

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References

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