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The Effect of Fluorine Implantation on Boron Diffusion in Metastable Si0.86 Ge0.14

Published online by Cambridge University Press:  17 March 2011

Huda A. W. A. El Mubarek ,
Yun Wang ,
Janet M. Bonar ,
Peter Hemment  and
Peter Ashburn
Huda A. W. A. El Mubarek
Affiliation:
School of Electronics & Computer Science, University of Southampton, Southampton, UK
Yun Wang
Affiliation:
School of Electrical & Electronic Engineering, University of Surrey, Guildford, UK
Janet M. Bonar
Affiliation:
School of Electronics & Computer Science, University of Southampton, Southampton, UK
Peter Hemment
Affiliation:
School of Electrical & Electronic Engineering, University of Surrey, Guildford, UK
Peter Ashburn
Affiliation:
School of Electronics & Computer Science, University of Southampton, Southampton, UK
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Abstract

This paper investigates the effect of varying F+ implantation energy on boron thermal diffusion and boron transient enhanced diffusion (TED) in metastable Si0.86Ge0.14 by characterising the diffusion of a boron marker layer in samples with and without P+ and F+ implants. The effect of two F+ implantation energies (185keV and 42keV) was studied at two anneal temperatures 950°C and 1025°C. In samples implanted with P+ & 185keV F+, the fluorine suppresses boron transient enhanced diffusion completely at 950°C and suppresses thermal diffusion by 25% at 1025°C. In samples implanted with P+ & 42keV F+, the fluorine does not reduce boron transient enhanced diffusion at 950°C. This result is explained by the location of the boron marker layer in the vacancy-rich region of the fluorine damage profile for the 185keV implant but in the interstitial-rich region for the 42keV implant. Isolated dislocation loops are seen in the SiGe layer for the 185keV implant. We postulate that these loops are due to the partial relaxation of the metastable Si0.86Ge0.14 layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 810: Symposium C – Silicon Front-End Junction Formation-Physics and Technology , 2004 , C8.15
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Hashim, Md. R., Lever, R.F. and Ashburn, P., Solid State Electronics 43, 131 (1999).Google Scholar
2. Kwong, M.Y., Kasnavi, R., Griffin, P., Plummer, J.D., Dutton, R.W.; IEEE Trans. Electron Devices 49, 1882 (2002).Google Scholar
3. Ohyu, K., Itoga, T. and Natsuaki, N., Jpn. J. Appl. Phys. 29, 457 (1990).Google Scholar
4. Robertson, L.S., Warnes, P.N., Jones, K.S., Earles, S.K., Law, M.E., Downey, D.F., Falk, S. and Liu, J., Mat. Res. Soc. Symp. Proc. 610, B4.2.1 (2000).Google Scholar
5. Shano, T.S., Kim, R., Hirose, T., Furuta, Y., Tsuji, H., Furuhashi, M. and Taniguchi, K., Proc. IEDM, 37.4.1 (2001).Google Scholar
6. Diebel, M., Chakravarthi, S., Machala, C. F., Ekbote, S., Jain, A. and Dunham, S. T., Mat. Res. Soc. Symp. Proc. 765, D6.15 (2003).Google Scholar
7. Mubarek, H.A.W. El, Ashburn, P.; App. Phys. Lett. 83, 4135 (2003).Google Scholar
8. Liu, K., Wu, J., Chen, J., Jain, A.; IEEE Electron Device Letters 24, 180 (2003).Google Scholar
9. Kasper, E. and Herzog, H. J., Thin Solid Films 44, 357(1977).Google Scholar
10. Giles, M. D., J. Electrochem. Soc. 138, 1160 (1991)Google Scholar