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Effect of Bias on Recovery Rates of Stressed Amorphous Silicon Mis Structures

Published online by Cambridge University Press:  25 February 2011

W. B. Jackson  and
M. Hack
W. B. Jackson
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
M. Hack
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
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Abstract

The effect of Fermi level position on the annealing of defects created by electron accumulation is investigated. Results indicate that holes accelerate the annealing of defects created by electrons confirming the theoretical understanding of the proximity compensated layer. Capacitance-voltage curves indicate that hole accumulation tends to create defect states located closer to the conduction band than electron accumulation–a result in agreement with energetics of defect formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 361
Copyright
Copyright © Materials Research Society 1990

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References

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