Hostname: page-component-745bb68f8f-l4dxg Total loading time: 0 Render date: 2025-01-27T14:08:16.773Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of as-deposited residual stress on transition temperature of VO2 films

Published online by Cambridge University Press:  01 February 2011

Kuang Yue Tsai ,
Tsung-Shune Chin ,
Han-Ping D. Shieh  and
Cheng Hsin Ma
Kuang Yue Tsai
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, 101, Sec-2. Kuang-Fu Rd., Hsinchu 30043, TAIWAN;
Tsung-Shune Chin
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, 101, Sec-2. Kuang-Fu Rd., Hsinchu 30043, TAIWAN;
Han-Ping D. Shieh
Affiliation:
Institute of Electro-Optical Engineering, National Chiao-Tung University, 1001, Ta-Hsueh Rd., Hsinchu 30010, TAIWAN
Cheng Hsin Ma
Affiliation:
Materials Science and Engineering, and Frederick Seitz Materails Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL, USA.
Get access

Abstract

VO2 is a material with reversible thermo-chromic properties. The reversible phase transition of a strain-free single-crystalline VO2, at a transition temperature (Tt) 68°C, is accompanied with changes in crystal structure, optical and electrical properties. With different processing conditions during thin film deposition, different transmittance loops will be resulted upon thermal cycling. The residual stress of the thin films with poor crystallinity, as determined from X-ray diffractometry, is found to be an important factor responsible for the Tt that increases with increasing residual stress. Residual stress affects the hysteresis span of the transmittance loop. The relationship between residual stress of as-deposited VO2 films and the relative positions between vanadium and oxygen under the residual stress are also delineated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 803: Symposia GG/HH – Advanced Characterization Techniques for Data Storage Materials – Phase Change and Nonmagnetic Materials for Data Storage , 2003 , HH2.8
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Goodenough, J. B.: J. Solid State Chem. 3(1971) 490.Google Scholar
2. Lu, S., Hou, L. and Gan, F.: Adv. Mater. 9 (1997) 244.Google Scholar
3. Shigesato, Y., Enomoto, M. and Odaka, H.: Jpn. J. Appl. Phys. 39 (2000) 6016.Google Scholar
4. Eden, D. D.: Optical Processing Systems 185 (1978) 97.Google Scholar
5. Muraoka, Y., Ueda, Y. and Hiroi, Z.: J. Phys. Chem. Solids 63 (2002) 965.Google Scholar
6. Case, F. C.: J. Vac. Sci. Technol. A 5 (1987) 1762.Google Scholar
7. Ladd, L. A. and Paul, W.: Solid State commun., 7 (1969) 425.Google Scholar
8. Ma, C.H., Huang, J. H., Haydn Chen: Thin Solid Films, 418 (2002) 73.Google Scholar