Hostname: page-component-745bb68f8f-kw2vx Total loading time: 0 Render date: 2025-02-10T09:27:32.825Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Annealing Under Uniform Stress on Photoluminescence, Electrical and Structural Properties of Silicon

Published online by Cambridge University Press:  15 February 2011

A. Misiuk ,
G. P. Karwasz ,
M. Cazzanelli ,
W. Jung  and
L. Pavesi
A. Misiuk
Affiliation:
Institute of Electron Technology, Lotnikow 46, 02-668 Warszawa, Poland, misiuk@ite.waw.pl
G. P. Karwasz
Affiliation:
Universita di Trento, Sommarive 14,I-38050 Povo, Italy, karwasz@alpha.science.unitn.it
M. Cazzanelli
Affiliation:
Universita di Trento, Sommarive 14,I-38050 Povo, Italy, karwasz@alpha.science.unitn.it
W. Jung
Affiliation:
Institute of Electron Technology, Lotnikow 46, 02-668 Warszawa, Poland, misiuk@ite.waw.pl
L. Pavesi
Affiliation:
Universita di Trento, Sommarive 14,I-38050 Povo, Italy, karwasz@alpha.science.unitn.it
Get access

Abstract

Effect of increased pressure (up to 1.5GPa) during annealing of Cz-Si on creation of thermal donors (at 720 - 1000K) and visible luminescence (peaking at 1.7- 2.2eV for samples annealed at up to 1420K) is reported. The observed phenomena are related to stress - stimulated oxygen clustering / precipitation in Cz-Si resulting in creation of specific defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 245
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Misiuk, A., Datsenko, L.I., Surma, B. and Popov, V.P., in Proc. ESSDERC '94, edited by Hill, C. and Ashburn, P. (Editions Frontiers, Gif-sur-Yvette, 1994), p. 243 - 246.Google Scholar
2. Misiuk, A. and Zaumseil, P., in Proceed. Altech 95, edited by Kolbesen, B.O. (The Electrochemical Society Proc. 95-30, Pennington, NJ, 1995) pp. 194–203.Google Scholar
3. Antonova, I.V., Misiuk, A., Popov, V.P., Fedina, L.I., Shaimeev, S.S., Physica B 225, 251 (1996).Google Scholar
4. Misiuk, A., Surma, B., Hartwig, J., Mater. Sci. Eng. B36, 30 (1996).Google Scholar
5. Misiuk, A., Jung, W., phys. stat. sol. (b) 198, 565 (1996).Google Scholar
6. Karwasz, G.P., Misiuk, A., Ceschini, M., Pavesi, L., Appl. Phys. Lett. 69, 2900 (1996).Google Scholar
7. Borghesi, A., Pivac, B., Sassella, A. and Stella, A., J. Appl. Phys. 77, 4169 (1995).Google Scholar
8. Emtsev, V.V., Andreev, B.A., Misiuk, A., Schmalz, K., in Early Stages of Oxygen Precipitation in Silicon, edited by Jones, R. (NATO ASI Series 3, High Technology - vol. 17, Kluwer Academic Publ., Dordrecht, 1996), p. 345.Google Scholar
9. Ono, H., Ikarashi, T., Kimura, S., Tanikawa, A., J. Appl. Phys. 78, 4395 (1995).Google Scholar
10. Misiuk, A., Solid State Phenomena 19&20, 387 (1991).Google Scholar
11. Misiuk, A., presented at the XII Conference on Solid State Crystals, Zakopane, Poland 1996, in press.Google Scholar
12. Vanhellemont, J., J. Appl. Phys. 78, 4297 (1995).Google Scholar
13. Surma, B., Misiuk, A., Adamczewska, J., Lisovskii, I.P., Lozinskii, V.B., in CAS'94 Proc. (17th Annual Semiconductor Conference, Sinaia, Romania, 1994), vol. 1, p. 325.Google Scholar