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Early Failure Sites and Electromigration

Published online by Cambridge University Press:  22 February 2011

George O. Ramseyer ,
Joseph V. Beasock ,
Thomas E. Renz  and
Lois H. Walsh
George O. Ramseyer
Affiliation:
Rome Laboratory/ERDR, 525 Brooks Rd., Griffiss AFB, NY 13441-4505
Joseph V. Beasock
Affiliation:
Rome Laboratory/ERDR, 525 Brooks Rd., Griffiss AFB, NY 13441-4505
Thomas E. Renz
Affiliation:
Rome Laboratory/ERDR, 525 Brooks Rd., Griffiss AFB, NY 13441-4505
Lois H. Walsh
Affiliation:
Rome Laboratory/ERDR, 525 Brooks Rd., Griffiss AFB, NY 13441-4505
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Abstract

By definition, half of all interconnects fail before the measured mean time to failure (t50) is reached. To predict early failures the basic reactions occurring in the metallization and its environment must be understood. To this end, fatal interconnect failure sites were characterized by Auger electron spectroscopy, atomic force microscopy and backscattered scanning electron microscopy. CVD silicon dioxide passivation layer/fatal void interfaces of typical early failure voids were characterized and compared to a typical late failure void interface. The topographies of these fatal voids were also quantitatively compared to increase our understanding of early failure sites and electromigration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994 , 421
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

[1] Lloyd, J.R. and Thompson, C.V., MRS Bulletin XVIII (12), 19 (1993).Google Scholar
[2] LaCombe, D.J. and Parks, E.L., Proc. 24th IEEE Reliability Phys. Symp., 1 (1986).Google Scholar
[3] Mattila, J.B., Levi, M.W. and Walsh, L.H., Proc. 9th International VLSI Multilevel Interconnect Conf., 430 (1992).Google Scholar
[4] Sanchez, J.E. Jr, Kraft, O. and Arzt, E., Appl. Phys. Lett. 61 3121 (1992).Google Scholar
[5] Black, J.R., Proc. 6th IEEE Symp. on Reliability in Physics, 148 (1967).Google Scholar
[6] Schreiber, H.U., Solid State Electronics 24, 583 (1981).Google Scholar
[7] Chang, C.Y. and Vook, R.W., Thin Solid Films 223 23 (1993).Google Scholar
[8] Hu, C.-K., Small, M.B., Rodbell, K.P., Stanis, C., Blauner, P. and Ho, P.S., Appl. Phys. Lett. 62 1023 (1993).Google Scholar
[9] Augur, R.A., Proc. 32nd IEEE Symp. on Reliability Physics, 266 (1994).Google Scholar