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DX Centers in GaAs and AlxGal-x.As: Properties and Influence on Material and Device Characteristics

Published online by Cambridge University Press:  26 February 2011

P. M. Mooney
P. M. Mooney*
Affiliation:
IBM T. J. Watson Research Center, PO Box 218, Yorktown Heights, NY 10598 USA
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Abstract

The DX center, the lowest energy state of the donor in AlGaAs with x > 0.22, is responsible for the reduced conductivity as well as the persistent photoconductivity observed in this material at low temperature. Extensive studies of the properties of this level and of its effects on the characteristics of some heterojunction devices are reviewed here. Recent measurements are presented showing that the characteristics of the DX center remain essentially unchanged when it is resonant with the conduction band (x < 0.22) and that, independent of other compensation mechanisms, the DX center therefore limits the free carrier concentration in GaAs to a maximum of about 2×1019 cm− 3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 561
Copyright
Copyright © Materials Research Society 1988

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