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Drastic Revolution in Catalytic Cvd using “Catalytic Plate” Instead of “Hot Wire”

Published online by Cambridge University Press:  17 March 2011

Atsushi Masuda ,
Yoriko Ishibashi  and
Hideki Matsumura
Atsushi Masuda
Affiliation:
School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), Asahidai, Tatsunokuchi, Ishikawa 923-1292, Japan
Yoriko Ishibashi
Affiliation:
School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), Asahidai, Tatsunokuchi, Ishikawa 923-1292, Japan
Hideki Matsumura
Affiliation:
School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), Asahidai, Tatsunokuchi, Ishikawa 923-1292, Japan
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Abstract

Thermal influence on film preparation in catalytic chemical vapor deposition (Cat-CVD), often called hot-wire CVD, is investigated since heat radiation from catalyzer and thermal transport by introduced gases are one of the dominant factors to determine the film properties. It was found that catalyzer-surface area is a key parameter determining not only the deposition rate but also the thermal influence. “Catalytic platE” instead of the conventional wire was proposed in order to suppress the heat radiation with keeping the catalyzer-surface area. Cat-CVD method employing the catalytic plate is superior to conventional “hot-wirE” CVD method.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A6.3
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

[1]Matsumura, H., J. Appl. Phys., 65, 4396, (1989).Google Scholar
[2]Mahan, A. H., Carapella, J., Nelson, B. P., Crandall, R. S. and Balberg, I., J. Appl. Phys., 69, 6728, (1991).Google Scholar
[3]Matsumura, H., Jpn. J. Appl. Phys., 30, L1522 (1991).Google Scholar
[4]Matsumura, H., J. Appl. Phys., 66, 3612, (1989).Google Scholar
[5]Hattori, R., Nakamura, G., Nomura, S., Ichise, T., Masuda, A. and Matsumura, H., 19th Annual IEEE Gallium Arsenide Integrated Circuit Symp., Anaheim, 1997, p. 78.Google Scholar
[6]Minamikawa, T., Yonezawa, Y., Nakamura, T., Fujimori, Y., Masuda, A. and Matsumura, H., Jpn. J. Appl. Phys., 38, 5358, (1999).Google Scholar
[7]Masuda, A., Niikura, C., Ishibashi, Y. and Matsumura, H., Solar Energy Mater. Solar Cells, (2000) (in press).Google Scholar
[8]Langford, A. A., Fleet, M. L., Nelson, B. P., Lanford, W. A. and Maley, N., Phys. Rev., B 45, 13367, (1992).Google Scholar