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Drain Current DLTS Spectra and GaAs Substrate Crystal Effect on Low-Frequency-Oscillations of Si-Implanted Mesfets

Published online by Cambridge University Press:  03 September 2012

Yasuyuki Saito ,
Tohru Suga ,
Kazuhiko Inoue ,
Tatsuro Mitani ,
Yutaka Tomizawa ,
Johji Nishio ,
Kazutaka Terashima ,
Tohru Katsumata ,
Katsuyoshi Fukuda  and
Shoichi Washizuka
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Yasuyuki Saito
Affiliation:
Micro-electronics CTR. Tamagawa Works. Toshiba Corp., I. Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan.
Tohru Suga
Affiliation:
Micro-electronics CTR. Tamagawa Works. Toshiba Corp., I. Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan.
Kazuhiko Inoue
Affiliation:
Micro-electronics CTR. Tamagawa Works. Toshiba Corp., I. Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan.
Tatsuro Mitani
Affiliation:
Micro-electronics CTR. Tamagawa Works. Toshiba Corp., I. Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan.
Yutaka Tomizawa
Affiliation:
Micro-electronics CTR. Tamagawa Works. Toshiba Corp., I. Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan.
Johji Nishio
Affiliation:
R&D CTR. Toshiba Corp. the same address.
Kazutaka Terashima
Affiliation:
(now) ERATO, JRDC. 2–13–1 Sengen, Tsukuba 305, Japan.
Tohru Katsumata
Affiliation:
(now) Toyo Univ. Fac. Eng., 2100 Kujirai Nakanodai, Kawagoe 350, Japan.
Katsuyoshi Fukuda
Affiliation:
R&D CTR. Toshiba Corp. the same address.
Shoichi Washizuka
Affiliation:
Semicond. Div., Toshiba Corp., 72 Horikawa-cho, Saiwai-ku, Kawasaki 210, Japan.
Satao Yashiro
Affiliation:
Semicond. Div., Toshiba Corp., 72 Horikawa-cho, Saiwai-ku, Kawasaki 210, Japan.
Shigeoki Tarami
Affiliation:
Semicond. Div., Toshiba Corp., 72 Horikawa-cho, Saiwai-ku, Kawasaki 210, Japan.
Masahiro Nakajima
Affiliation:
Semicond. Div., Toshiba Corp., 72 Horikawa-cho, Saiwai-ku, Kawasaki 210, Japan.
Masayuki Watanabe
Affiliation:
Semicond. Div., Toshiba Corp., 72 Horikawa-cho, Saiwai-ku, Kawasaki 210, Japan.
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Abstract

We report drain-current (Id) deep level transient spectroscopy (DLTS) spectra and liquid-encapsulated-Czochralski-technique (LEC) GaAs crystal effect on low-frequency-oscillation (LFO) of wide gate (400-μm) Si-implanted GaAs metal- semiconductor field- effect- transistors (MESFETs). In the range of this experiment we could not find distinguishing DLTS peaks surely to be linked with Id-LFO of the MESFETs. Stoichiometric-melt growth LEC-boules showed relatively large Id-LFO phenomena. As-rich-melt growth LEC-boules showed tolerance to Id-LFO. We conclude that Id-LFO is not directly linked to deep centers themselves but interaction between deep centers and potential profiles and electrons. Stability of potential profile or band profile depends on “pinning’ center, which affects Fermi-level or quasi-Fermi-level stability. ‘Pinning’ center such as EL2s of ‘LEC GaAs crystals” is essential.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 791
Copyright
Copyright © Materials Research Society 1992

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