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Downstream Etching of GaAs and InP Using Molecular Chlorine and Chlorine Radicals

Published online by Cambridge University Press:  21 February 2011

David G. Lishan  and
Evelyn L. Hu
David G. Lishan
Affiliation:
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106
Evelyn L. Hu
Affiliation:
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106
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Abstract

The temperature dependent etching of GaAs and InP using both molecular and remote plasma activated Cl2 and HC1 is examined. GaAs etches nearly three times faster in a remotely generated C12 plasma than in a molecular Cl2 environment with plasma off. The temperature dependance from room temperature to 250°C is similar for both cases. Significant etch rates of GaAs are observed for HC1 remotely generated plasma even at room temperature (∼1000 Å/min). Although the etch rate for InP below 150°C is quite low for either C12 or HCl, the relatively fast, temperature independent etch rate above this temperature is comparable to that of GaAs. The results are compared to RIE and a thermodynamic model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 158: Symposium B – In-Situ Patterning: Selective Area Deposition and Etching , 1989 , 407
Copyright
Copyright © Materials Research Society 1990

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References

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