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Dose Rate Dependence of the Amorphization of Silicon Carbide

Published online by Cambridge University Press:  15 February 2011

L.L. Snead ,
S.J. Zinkle ,
W.S. Eatherly ,
D.K. Hensley ,
N.L. Vaughn  and
J. W. Jones
L.L. Snead
Affiliation:
Metals and Ceramics DivisionOak Ridge National Laboratory P.O. Box 2008, Oak Ridge, TN 38730-6087, SneadLL@oml.gov
S.J. Zinkle
Affiliation:
Metals and Ceramics DivisionOak Ridge National Laboratory P.O. Box 2008, Oak Ridge, TN 38730-6087, SneadLL@oml.gov
W.S. Eatherly
Affiliation:
Metals and Ceramics DivisionOak Ridge National Laboratory P.O. Box 2008, Oak Ridge, TN 38730-6087, SneadLL@oml.gov
D.K. Hensley
Affiliation:
Solid State Division, Oak Ridge National Laboratory P.O. Box 2008, Oak Ridge, TN 38730-6087
N.L. Vaughn
Affiliation:
Metals and Ceramics DivisionOak Ridge National Laboratory P.O. Box 2008, Oak Ridge, TN 38730-6087, SneadLL@oml.gov
J. W. Jones
Affiliation:
Metals and Ceramics DivisionOak Ridge National Laboratory P.O. Box 2008, Oak Ridge, TN 38730-6087, SneadLL@oml.gov
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Abstract

Single crystal silicon carbide (SiC) has been 2 MeV silicon ion irradiated in various irradiation temperature and ion flux ranges to measure the effect of these parameters on the critical dose for amorphization. The temperature and flux range for which amorphization was observed ranged from 80 to 400 K and 0.066 to 3 × 104 dpa/s, respectively. The critical dose, Dcrit was found by locating the depth of the boundary between partially crystalline and fully amorphous material using dark field TEM from samples prepared in cross section. This depth was compared to the damage profile as calculated using the TRIM-96 code. The temperature dependence of Dcrit is found to agree well with previously reported values, though new evidence suggests a defect species becoming mobile in the 250-300 K range. Also of significance is that Dcrit was dependent on flux at 340 K, ranging from 0.79 displacements per atom at the lowest ion flux to ∼0.6 dpa at the highest flux level. The dose rate dependence of Dcrit, is compared with a chemical rate theory model previously described by the authors. It is seen that the dose rate dependence is substantially weaker than theorized. An extrapolation of the measured dose rate dependence is also compared with recent data on fast neutron amorphized SiC.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 540: Symposium N / Microstructural Processes in Irradiated Materials , 1998 , 165
Copyright
Copyright © Materials Research Society 1999

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