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Dose Rate and Temperature Dependence of Ion-Beam-Induced Defect Evolution in Si and SiC

Published online by Cambridge University Press:  01 February 2011

M. Posselt ,
L. Bischoff ,
J. Teichert  and
A. Ster
M. Posselt
Affiliation:
Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf, D-01314 Dresden, Germany
L. Bischoff
Affiliation:
Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf, D-01314 Dresden, Germany
J. Teichert
Affiliation:
Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf, D-01314 Dresden, Germany
A. Ster
Affiliation:
Research Institute for Technical Physics and Materials Science, H-1525 Budapest, Hungary
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Abstract

A focused ion beam system is applied to investigate the dose dependence of the shape of Ge channeling implantation profiles in Si and SiC at two very different dose rates (1011 and 1018 cm-2 s-1), and for implantation temperatures between room temperature and 580 °C. The competing influence of dose rate and temperature observed is explained in terms of intracascade defect relaxation. For the different implantation temperatures, the time scale for defect reduction is estimated. The results obtained for Si are compared with those for SiC.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F11.2
Copyright
Copyright © Materials Research Society 2002

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References

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