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Doped Silicon Nanoparticles Synthesized by Nonthermal Plasma

Published online by Cambridge University Press:  01 February 2011

Xiaodong Pi ,
Rebecca Anthony ,
Stephen Campbell  and
Uwe Kortshagen
Xiaodong Pi
Affiliation:
xdpi@umn.edu, University of Minnesota, Department of Mechanical Engineering, 111 Church Street SE, Minneapolis, MN, 55108, United States
Rebecca Anthony
Affiliation:
ranthony@me.umn.edu, University of Minnesota, Department of Mechanical Engineering, 111 Church Street SE, Minneapolis, MN, 55455, United States
Stephen Campbell
Affiliation:
campb001@umn.edu, University of Minnesota, Department of Electrical Engineering and Computer Science, 200 Union Street, Minneapolis, MN, 55455, United States
Uwe Kortshagen
Affiliation:
uk@me.umn.edu, University of Minnesota, Department of Mechanical Engineering, 111 Church Street SE, Minneapolis, MN, 55455, United States
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Abstract

Silicon nanoparticles (Si-NPs) < 6 nm have been doped with B and P in nonthermal plasma. The doping efficiency of B is smaller than that of P, consistent with the theoretically predicted larger formation energy of B than P. The effect of doping on the oxidation-induced changes in light emission from Si-NPs is different between B and P. It appears that P is at or near the surface of Si-NPs, and that B is well incorporated inside Si-NPs. Inks based on doped Si-NPs are produced by attaching alkyl ligands to the surface of Si-NPs and dispersing them in organic solvents.

Keywords

Sinanostructurechemical composition
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1031: Symposium H – Nanostructured Solar Cells , 2007 , 1031-H14-04
Copyright
Copyright © Materials Research Society 2008

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References

1. Kanzawa, S. H. Y., Fujii, M. and Yamamoto, K. Solid State Commun. 100, 227 (1996).10.1016/0038-1098(96)00408-5Google Scholar
2. Fujii, M. Hayashi, S. and Yamamoto, K. J. Appl. Phys. 83, 7953 (1998).10.1063/1.367976Google Scholar
3. Fujii, S. H. M., Mimura, A. and Yamamoto, K. Appl. Phys. Lett. 75, 184 (1999).10.1063/1.124313Google Scholar
4. Mimura, A. Fujii, M. Hayashi, S. Kovalev, D. and Koch, F. Phys. Rev. B 62, 12625 (2000).10.1103/PhysRevB.62.12625Google Scholar
5. Fujii, M. Mimura, A. and Hayashi, S. Phys. Rev. Lett. 89, 206805 (2002).10.1103/PhysRevLett.89.206805Google Scholar
6. ̌Svřcek, V., Slaoui, A. Muller, J.-C., Rehspringer, J.-L., Honerlage, B. Tomasiunas, R. and Pelant, I. Physica E 16, 420 (2003).Google Scholar
7. Tchebotareva, A. L., Dooda, M. J. A. de, Biteen, J. S., Atwater, H. A., and Polman, A. J. Lumin. 114, 137 (2005).10.1016/j.jlumin.2004.12.014Google Scholar
8. Baldwin, R. K., Zou, J. Pettigrew, K. A., Yeagle, G. J., Britt, R. D., and Kauzlarich, S. M., Chem. Commun. 6, 658 (2006).10.1039/b513330kGoogle Scholar
9. Pi, X. D., Mangolini, L. Campbell, S. A., and Kortshagen, U. Phys. Rev. B 75, 085423 (2007).10.1103/PhysRevB.75.085423Google Scholar
10. Mangolini, L. Thimsen, E. and Kortshagen, U. Nano Lett. 5, 655 (2005).10.1021/nl050066yGoogle Scholar
11. Mangolini, L. and Kortshagen, U. Adv. Mater. 19, 2513 (2007).10.1002/adma.200700595Google Scholar
12. Pi, X. D., Liptak, R. W., Campbell, S. A., and Kortshagen, U. Appl. Phys. Lett. 91, 083112 (2007).10.1063/1.2773931Google Scholar
13. Jurbergs, D. Rogojina, E. Mangolini, L. and Kortshagen, U. Appl. Phys. Lett. 88, 233116 (2006).10.1063/1.2210788Google Scholar
14. Rai-Choudhury, P. and Salkovitz, F. I., J. Cryst. Growth 7, 361 (1970).Google Scholar
15. Cantele, G. Degoli, E. Luppi, E. Magri, R. N., D., Iadonisi, G. and Ossicini, S. Phys. Rev. B 72, 113303 (2005).Google Scholar
16. Ledoux, G. Guillois, O. Porterat, D. Reynaud, C. Huisken, F. Kohn, B. and Paillard, V. Phys. Rev. B 62, 15942 (2000).10.1103/PhysRevB.62.15942Google Scholar
17. Nutzel, J. F. and Abstreiter, G. Phys. Rev. B 53, 13551 (1996).10.1103/PhysRevB.53.13551Google Scholar
18. Oberbeck, L. Curson, N. J. Hallam, T. and Simmons, M. Y., Appl. Phys. Lett. 85, 1359 (2004).10.1063/1.1784881Google Scholar
19. Jorke, H. and Kibbel, H. Appl. Phys. Lett. 57, 1763 (1990).10.1063/1.104060Google Scholar
20. Hua, F. J., Swihart, M. T. & Ruckenstein, E. Langmuir 21, 6054 (2005)10.1021/la0509394Google Scholar