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Dopant Profile in Silicon Processing

Published online by Cambridge University Press:  01 February 2011

Kal. Renganathan Sharma Ph D PE
Kal. Renganathan Sharma Ph D PE*
Affiliation:
Professor I/C, Research Vellore Institute of Technology (Deemed University) Vellore, TN, India 632 014 Tel: 91-416-243091, Fax: 91-416-243092 Email: jyoti kalpika@yahoo.com
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Abstract

Non-Fickian effects are accounted for in dopant diffusion by the solution of hyperbolic mass wave propagative equation. The surface flux is represented by a modified Bessels composite function of first kind of 0th order in the open interval of τ>x.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 716: Symposium B – Silicon Materials-Processing, Characterization, and Reliability , 2002 , B4.30
Copyright
Copyright © Materials Research Society 2002

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