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Dopant Mapping and Strain Analysis in B Doped Silicon Structures Using Micro-Raman Spectroscopy

Published online by Cambridge University Press:  10 February 2011

M. Bowden ,
D. J. Gardiner ,
M. A. Lourengo ,
J. Hedley ,
D. Wood ,
J. S. Burdess  and
A. J. Harris
M. Bowden
Affiliation:
Department of Chemical and Life Sciences, University of Northumbria at Newcastle, Ellison Place, Newcastle upon Tyne, NE1 8ST, UK.
D. J. Gardiner
Affiliation:
Department of Chemical and Life Sciences, University of Northumbria at Newcastle, Ellison Place, Newcastle upon Tyne, NE1 8ST, UK.
M. A. Lourengo
Affiliation:
Department of Chemical and Life Sciences, University of Northumbria at Newcastle, Ellison Place, Newcastle upon Tyne, NE1 8ST, UK.
J. Hedley
Affiliation:
School of Engineering, University of Durham, South Road, Durham, DH1 3LE, UK.
D. Wood
Affiliation:
School of Engineering, University of Durham, South Road, Durham, DH1 3LE, UK.
J. S. Burdess
Affiliation:
Department of Mechanical Engineering, Newcastle University, Stephenson Building, Newcastle upon Tyne, NE1 7RU, UK.
A. J. Harris
Affiliation:
Department of Mechanical Engineering, Newcastle University, Stephenson Building, Newcastle upon Tyne, NE1 7RU, UK.
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Abstract

Raman microscopy, using a novel line focus configuration, has been used here to study boron concentration distributions and depth profiles in silicon for two different sources of dopant. Changes in the Raman phonon peak frequency for boron doped silicon have been calibrated against concentration by comparison with SIMS data and a relationship between Raman shift and lattice strain has been obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 518: Symposium N – Microelectromechanical Structures for Materials Research , 1998 , 239
Copyright
Copyright © Materials Research Society 1998

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References

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