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The Dopamt Diffusion Mechanism in Eicimer Laser Induced Molten Silicon

Published online by Cambridge University Press:  26 February 2011

Toshiyuki Sameshima  and
Setsuo Usui
Toshiyuki Sameshima
Affiliation:
Sony Corporation Research Center, Yokohama 240 Japan
Setsuo Usui
Affiliation:
Sony Corporation Research Center, Yokohama 240 Japan
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Abstract

We have calculated the degree of dopant diffusion which occurs during non-equilibrium incorporation of boron from the silicon surface into the molten silicon induced by a pulsed excimer laser. When a high-power lascr causes the melt front to proceed into the substrate faster than 8 m/s, p+ -doped regions are formed near the surface of the molten silicon because boron atoms cannot diffuse sufficiently fast for the junction depth to reach the maximum melt depth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 101: Symposium B – Laser and Particle-Beam Chemical Processing for Microelectronics , 1987 , 491
Copyright
Copyright © Materials Research Society 1998

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References

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