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The Donor State of Vanadium in Indium Phosphide

Published online by Cambridge University Press:  28 February 2011

Georges Bremond ,
A. Nouailhat ,
G. Guillot ,
B. Deveaud ,
B. Lambert ,
Y. Toudic ,
B. Clerjaud  and
C. Naud
Georges Bremond
Affiliation:
LPM, INSA DE LYON, 69621 Villeurbanne Cédex (France)
A. Nouailhat
Affiliation:
LPM, INSA DE LYON, 69621 Villeurbanne Cédex (France)
G. Guillot
Affiliation:
LPM, INSA DE LYON, 69621 Villeurbanne Cédex (France)
B. Deveaud
Affiliation:
CNET/LAB/ICM, B.P. 40, 22301 Lannion (France)
B. Lambert
Affiliation:
CNET/LAB/ICM, B.P. 40, 22301 Lannion (France)
Y. Toudic
Affiliation:
CNET/LAB/ICM, B.P. 40, 22301 Lannion (France)
B. Clerjaud
Affiliation:
OMC, UNIVERSITE P. & M. Curie, Tour n°13, 75230 Paris Cédex (France)
C. Naud
Affiliation:
OMC, UNIVERSITE P. & M. Curie, Tour n°13, 75230 Paris Cédex (France)
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Abstract

We have performed studies on Vanadium doped InP, especially p-type InP codoped with Zn and V. Luminescence excitation experiments, DLTS, DLOS and absorption experiments lead to the conclusion that the donor level (V3+/V4+) of Vanadium is at about 0.2 eV above the valence band. Optical cross-sections that are determined by DLOS allow to observe for the first time a resonance in the valence band of a III-V semiconductor that we tentatively interpret as an excited state of V4+.

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References

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