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Disorder Characterization of Oxide/Silicon Interfaces from I-V Curves

Published online by Cambridge University Press:  01 February 2011

Louis Nemzer  and
Fredy R. Zypman
Louis Nemzer
Affiliation:
Gerofsky Physics Center, Yeshiva University, 2495 Amsterdam Ave., New York, NY, USA
Fredy R. Zypman
Affiliation:
Gerofsky Physics Center, Yeshiva University, 2495 Amsterdam Ave., New York, NY, USA
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Abstract

In this paper, we present results on transmission-energy curves through quantum wells with disordered interfaces. We propose a rule to process experimental data to obtain information about the degree of disorder.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 786: Symposium E – Fundamentals of Novel Oxide/Semiconductor Interfaces , 2003 , E3.1
Copyright
Copyright © Materials Research Society 2004

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References

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