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Dislocation Density Reduction in GaAs Epilayers on Si Using Strained Layer Superlattices

Published online by Cambridge University Press:  28 February 2011

S. Sharan ,
J. Narayan  and
J. C. C. Fan
S. Sharan
Affiliation:
Dept of Materials Science and Engineering, North Carolina State University, Raleigh, N. C. 27695 - 7916
J. Narayan
Affiliation:
Dept of Materials Science and Engineering, North Carolina State University, Raleigh, N. C. 27695 - 7916
J. C. C. Fan
Affiliation:
Kopin Corporation Taunton, MA 02780
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Abstract

Defects such as dislocations and interfaces play a crucial role in the performance of heterostracture devices. The full potential of GaAs on Si heterostructures can only be realized by controlling the defect density. The reduction of threading dislocations by the use of strained layer superlattices has been studied in these heterostructures. Several superlattice structures have been used to reduce the density of threading dislocations in the GaAs epilayer. The use of strained layer superlattices in conjunction with rapid thermal annealing was most effective in reducing threading dislocation density. Transmission electron microscopy has been used to study the dislocation density reduction and the interaction of threading dislocations with the strained layers. A model has been developed based on energy considerations to determine the critical thickness required for the bending of threading dislocations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 375
Copyright
Copyright © Materials Research Society 1990

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