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Direct Measurements of Thermal Stress Distributions in Large Die Bonds for Power Electronics

Published online by Cambridge University Press:  10 February 2011

Jun He ,
M. C. Shaw ,
N. Sridhar ,
B. N. Cox  and
D. R. Clarke
Jun He
Affiliation:
Rockwell Science Center, 1049 Camino Dos Rios, Thousand Oaks, CA 91360, jhe@rsc.rockwell.com
M. C. Shaw
Affiliation:
Rockwell Science Center, 1049 Camino Dos Rios, Thousand Oaks, CA 91360, jhe@rsc.rockwell.com
N. Sridhar
Affiliation:
Rockwell Science Center, 1049 Camino Dos Rios, Thousand Oaks, CA 91360, jhe@rsc.rockwell.com
B. N. Cox
Affiliation:
Rockwell Science Center, 1049 Camino Dos Rios, Thousand Oaks, CA 91360, jhe@rsc.rockwell.com
D. R. Clarke
Affiliation:
Materials Department, University of California, Santa Barbara, CA 93106
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Abstract

Large semiconductor devices can be subject to significant mechanical stress resulting from thermal expansion mismatch between the devices and packaging materials. This stress can either cause mechanical failure or change the operational characteristics of the device. Furthermore, this stress governs the reliability of the system during use. Therefore, a complete understanding is required of the nature of stress evolution during packaging, and its time and temperature dependence during subsequent service. In the present investigation, the absolute magnitudes and spatial distributions of time-dependent thermal residual stress are measured directly by piezospectroscopic techniques. These measurements are performed with high stress (±15 MPa) and spatial (1 μm) resolution in silicon specimens attached to substrates. Measurements are performed at room temperature on 25 mm square specimens, with continuous, layered solder joints in model specimens of silicon/solder/copper. Room temperature creep relaxation is also investigated. The stress data are then analyzed according to fundamental micromechanical models.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 515: Symposium J – Electronic Packaging Materials Science X , 1998 , 99
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Colbourne, P. D. and Cassidy, D. T., IEEE J. Quan. Elect., 27, 914 (1991)Google Scholar
2. Chen, W. T. and Nelson, C. W., IBM J. Res. Develop. 23, 179 (1979)Google Scholar
3. Suhir, E., Mat. Res. Soc. Symp. Proc. 72, 133 (1986)Google Scholar
4. He, Jun and Clarke, D. R., J. Am. Ceram. Soc., 78, 1347 (1995)Google Scholar
5. Wolf, I. De, Vanhellemont, J., Romano-Rodriguez, A., Norstrom, H. and Maes, H. E., J. Appl. Phys. 71, 898 (1992)Google Scholar
6. Anastassakis, E., Cantarero, A. and Cardona, M., Phys. Rev. B 41, 7529 (1990)Google Scholar
7. He, Jun, Sridhar, N. and Shaw, M. C., in preparationGoogle Scholar
8. Sridhar, N., He, Jun, Cox, B. N. and Shaw, M. C., in preparationGoogle Scholar
9. He, Jun, Shaw, M. C., Morris, W. L. and Mather, J., in preparationGoogle Scholar
10. Schroeder, S. A., Morris, S. L., Mitchell, M. R. and James, M. R., Fatigue of Electronic Materials, edited by Schroeder, S. A. and Mitchell, M. R. (ASTM STP 1153, Philadelphia, 1994) pp. 82–94 Google Scholar
11. Ranieri, J. P., Lauten, F. S. and Avery, D. H., J. Elec. Mat., 24, 1419 (1995).Google Scholar