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Direct Local Strain Measurement In Damascene Interconnects

Published online by Cambridge University Press:  01 February 2011

Moustafa Kasbari ,
Christian Rivero ,
Sylvain Blayac ,
Florian Cacho ,
Ola Bostrom  and
Roland Fortunier
Moustafa Kasbari
Affiliation:
kasbari@emse.fr, EMSE, CMP-GC, Avenue des anemones, Gardanne, N/A, France
Christian Rivero
Affiliation:
christian.rivero@st.com, STMicroelectronics, Rousset, 13106, France
Sylvain Blayac
Affiliation:
blayac@emse.fr, EMSE, CMP-GC, Gardanne, 13541, France
Florian Cacho
Affiliation:
florian.cacho@st.com, STMicroelectronics, Crolles, 38920, France
Ola Bostrom
Affiliation:
Ola.bostrom@st.com, STMicroelectronics, Rousset, 13106, France
Roland Fortunier
Affiliation:
fortunier@emse.fr, EMSE, CMP-GC, Gardanne, 13541, France
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Abstract

A new mechanical stress characterization method has been developed for Damascene copper interconnects. The micro strain gauge based on a rotating beam has been fabricated in situ on a standard industrial CMOS production line. Comparison of the beam deviation in the fabricated sensor with usual geometrical model is discussed. The saturation of the beam deviation leads to an analytical model which takes the stiffness of the anchoring points into account. This model gives a direct value of the local stress in the copper line for different annealing times. We show that this value is different from the one given by a curvature measurement method. The microstructure of the Damascene copper induces a higher stress level than full sheet deposition copper. The sensor was developed to be compatible within a CMOS process. It is suitable for in situ mechanical stress monitoring in Damascene lines and process optimization.

Keywords

microelectro-mechanical (MEMS)microelectronicsstress/strain relationship
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 990: Symposium B – Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics , 2007 , 0990-B07-06
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1 , Hu, M., S., “Stress-related problems in silicon technology”, J. Appl. Phys., vol. 70 (6), pp R53–R80, 1991.Google Scholar
2ITRS – Interconnect, 2005 EditionGoogle Scholar
3 De Wolf, I., Senez, V., Balboni, R. and Armigliato, A., Frabboni, S., Cedola, A. and Lagomarsino, S. (2003) “Techniques for mechanical strain analysis in sub-micrometer structures”. Microelectronic Engineering 70(2003) 425–435.Google Scholar
4 Kasbari, M., Delamare, R., Blayac, S., Rivero, C., Bostrom, O., Fortunier, R., “Embedded mechanical stress sensor for advanced process control”. ASMC 2007.Google Scholar
5 Drieënhuizen, Van, P, B.. “Comparaison of techniques for measuring both compressive and tensile stress in thin films”, sensor and actuators A, vol 37–38, 1993, p.756.Google Scholar
6 B, Horsfall A.., Santos, JM. M. Dos, Soare, S. M., Wright, N.G, O'neill, A. G., “Direct measurement of residual stress in sub micron interconnects”, semiconductor science and technology, 2003 Google Scholar
7 Master, N. D. “Side by side comparison of passive MEMS strain test structures under residual compression”, american society for testing and materials, 2001 Google Scholar
8 Harper, J. M. E., “Mechanism for microstructure evolution in electroplated copper thin films near room temperature”, Journal of applied physics, 1999 Google Scholar
9 Baldacci, A., Rivero, C., Gergaud, P., Grégoire, M., Sicardy, O., Bostrom, O., Boivin, P., Micha, J.S., Thomas, O., “Stresses in copper blanket films and damascene lines measurements and finite element analysis”, 2004 Google Scholar