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Direct Imaging of Ordering in Si-Ge Alloys, Ultrathin Superlattices, and Buried Ge Layers

Published online by Cambridge University Press:  22 February 2011

D. E. Jesson ,
S. J. Pennycook  and
J. -M. Baribeau
D. E. Jesson
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
S. J. Pennycook
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
J. -M. Baribeau
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
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Abstract

We review recent Z-contrast imaging studies of Si-Ge ultrathin superlattices, alloys, and buried Ge layers. It is found that whenever Si is deposited onto a Ge (2 × 1) surface, Ge is pumped into the growing Si layer, and this is accompanied by interfacial ordering. This is explained by a novel Ge atom pump mechanism which occurs during MBE growth. Codeposition and alloy growth results in long range (111) ordering as a consequence of lateral segregation during nonequilibrium growth.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 141
Copyright
Copyright © Materials Research Society 1991

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References

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