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Direct Formation of Thin Films and Epitaxial Overlayers at low Temperatures Using a Low-Energy (10–;500 ev) Ion Beam Deposition System*

Published online by Cambridge University Press:  25 February 2011

R. A. Zuhr ,
G. D. Alton ,
B. R. Appleton ,
N. Herbot ,
T. S. Noggle  and
S. J. Pennycook
R. A. Zuhr
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA
G. D. Alton
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA
B. R. Appleton
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA
N. Herbot
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA
T. S. Noggle
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA
S. J. Pennycook
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA
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Abstract

A low-energy ion beam deposition system has been developed at Oak Ridge National Laboratory and has been applied successfully to the growth of epitaxial films at low temperatures for a number of different elements. The deposition system utilizes the ion source and optics of a commercial ion implantation accelerator. The 35 keV mass- and energy-analyzed ion beam from the accelerator is decelerated in a four-element electrostatic lens assembly to energies between 10 and 500 eV for direct deposition onto a target under UHV conditions. Current densities on the order of 10 A/cm are achieved with good uniformity over a 1.4 cm diameter spot. The completed films are characterized by Rutherford backscattering, ion channeling, cross-section transmission electron microscopy, and x-ray diffraction. The effects of substrate temperature, ion energy, and substrate cleaning have been studied. Epitaxial overlayers which show good minimum yields by ion channeling (3–4%) have been produced at temperatures as low as 375°C for Si on Si(100) and 250°C for Ge on Ge(100) at growth rates that exceed the solid-phase epitaxy rates at these temperatures by more than an order of magnitude.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 93: Symposium C – Materials Modification and Growth Using Ion Beams , 1987 , 243
Copyright
Copyright © Materials Research Society 1987

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Footnotes

†

Present address: Massachusetts Institute of Technology, Cambridge, MA 02139 USA

*

Research sponsored by the Division of Materials Sciences, U.S. Department of Energy under contract DE-ACO5-840R21400 with Martin Marietta Energy Systems, Inc.

References

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