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Direct Formation of Fine Structure by Low Energy Focused Ion Beam

Published online by Cambridge University Press:  03 September 2012

T. Chikyow ,
A. Shikanai  and
N. Koguchi
T. Chikyow
Affiliation:
National Research Institute for Metals, 1-2-1 Sengen Tsukuba Ibaraki 305, JAPAN Tel:+81-298-53-1055 fax:+81-298-53-1093 e-mail, tchikyo@momokusa.nrim.go.jp
A. Shikanai
Affiliation:
School of Science and Engineering, Waseda University 2-3-4 Ohkubo Shinjyuku, Tokyo 169, Japan.
N. Koguchi
Affiliation:
National Research Institute for Metals, 1-2-1 Sengen Tsukuba Ibaraki 305, JAPAN Tel:+81-298-53-1055 fax:+81-298-53-1093 e-mail, tchikyo@momokusa.nrim.go.jp
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Abstract

GaAs micro crystals in line were grown on a sulfur-terminated GaAs surface by low energy focused ion beam. Ga ions, picked out from a liquid Ga ion source, were accelerated up to 10 KV to obtain a focused ion beam. The ions were given a positive bias to reduce their kinetic energy by retarding lens.The Ga ions landed on the surface softly and formed a series of Ga droplets. By subsequent As molecule supply to the Ga droplet, GaAs micro crystals in line were grown. This method was found to be useful to make fine structures directly on the semiconductor materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 211
Copyright
Copyright © Materials Research Society 1997

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