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Diffusion of Hydrogen in Amorphous Silicon in the Low Concentration Regime

Published online by Cambridge University Press:  01 January 1993

J.A. Roth ,
G.L. Olson ,
D.C. Jacobson  and
J.M. Poate
J.A. Roth
Affiliation:
Hughes Research Laboratories, Malibu, California 90265
G.L. Olson
Affiliation:
Hughes Research Laboratories, Malibu, California 90265
D.C. Jacobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
J.M. Poate
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

We report the first measurements of hydrogen diffusion kinetics in a-Si in the regime of low H concentration (<2×l019 cm−3). The results differ substantially from the diffusion behavior typically observed in hydrogenated a-Si:H at H concentrations >1020 cm−3. The activation energy and pre-exponential factor for low-concentration H diffusion are found to be 2.70 ± 0.02 eV and 2.2 × 104 cm2s−1, respectively, and are shown to be independent of both annealing time and H concentration. It is difficult to reconcile the combination of high activation energy and large pre-exponential factor with a simple deep-trap-limited diffusion model. Consequently, an alternative mechanism for H diffusion involving the migration of dangling bonds coupled with a H bond-switching step is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 291
Copyright
Copyright © Materials Research Society 1993

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References

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