Hostname: page-component-669899f699-7xsfk Total loading time: 0 Render date: 2025-04-24T23:06:33.779Z Has data issue: false hasContentIssue false
  • English
  • Français

Diffusion of Gold into Heavily Boron-Doped Silicon

Published online by Cambridge University Press:  15 February 2011

H. Bracht  and
A. Rodriguez Schachtrup
H. Bracht
Affiliation:
Institut für Metallforschung, Universität Münster, Wilhelm-Klemm-Straβe 10, D-48149 Münster, Germany
A. Rodriguez Schachtrup
Affiliation:
Institut für Metallforschung, Universität Münster, Wilhelm-Klemm-Straβe 10, D-48149 Münster, Germany
Get access

Abstract

Diffusion of Au into dislocation-free and highly dislocated Si with high B-background doping levels has been investigated with the aid of neutron activation analysis in conjunction with mechanical sectioning. The high B-doping level causes extrinsic conditions, i.e., the hole concentration exceeds the intrinsic carrier concentration even at diffusion temperatures between 900°C and 1100°C. All profiles are accurately described on the basis of the kick-out diffusion model and a mechanism which takes into account segregation of Au at dislocations. Our analysis provides solubility data of Au in Si and effective diffusion coefficients related to interstitial Au and Si self-interstitials I. The dependence of these quantities on the B-background doping level is well described by the Fermi-level effect. This analysis supports singly positively charged states in p-type Si of Au on interstitial (Aui) and substitutional (Aus) sites and of Si self-interstitials. Successful fitting of additionally requires an acceptor level of Aus. The electrical properties deduced for Aui, Aus and I are summarized in Table 2. Au profiles in highly dislocated Si obtained especially after diffusion at 900° C give evidence of Au trapped at dislocations. From our preliminary experimental results we determine an enthalpy difference of 2.7 eV between Au on substitutional sites and Au captured at dislocations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 25
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1] Brown, M., Jones, C.L. and Willoughby, A.F.W., Solid-State Electronics 18, 763 (1975).Google Scholar
[2] Stolwijk, N.A., Schuster, B. Hölzl, J., Mehrer, H. and Frank, W., Physica 116B, 335 (1983).Google Scholar
[3] Gösele, U., Frank, W. and Seeger, A., Applied Physics 23, 361 (1980).Google Scholar
[4] Bracht, H., Stolwijk, N.A. and Mehrer, H., Phys. Rev. B 52, 16542 (1995).Google Scholar
[5] Rodriguez Schachtrup, A., Bracht, H., Mehrer, H. and Yonenaga, I., Proceedings of the Int. Conf. on Diffusion in Materials DIMAT-96, to be published in Defect and Diffusion Forum.Google Scholar
[6] Stolwijk, N.A., Hölzl, J., Frank, W., Weber, E.R. and Mehrer, H., Appl. Phys. A 39, 37 (1986).Google Scholar
[7] Kühn, B., Doctoral Thesis, University of Stuttgart (1991).Google Scholar
[8] Bracht, H., Proceedings of the Int. Conf. on Diffusion in Materials DIMAT-96, to be published in Defect and Diffusion Forum.Google Scholar
[9] Thurmond, C.D., J. Electrochem. Soc. 122, 1133 (1975).Google Scholar
[10] Morin, F.J. and Maita, J.P., Phys. Rev. 96, 28 (1954).Google Scholar
[11] Jain, R.K. and Van Overstraeten, R.J., IEEE Transactions on Electron Devices, ED–21, 155 (1974).Google Scholar
[12] Utzig, J. and Gilles, D., Mat. Sci. Forum 39–41, 729 (1989).Google Scholar
[13] Collins, C.B., Carlson, R.O. and Gallagher, C.J., Phys. Rev. 105, 1168 (1957).Google Scholar
[14] Engström, O. and Grimmeiss, H.G., Applied Physics Letters 25, 413 (1974).Google Scholar
[15] Wong, D.C and Penchina, C.M., Phys. Rev. B 12, 5840 (1975).Google Scholar
[16] Car, R., Kelly, P.J., Oshiyama, A. and Pantelides, S.T., Phys. Rev. Letters 52, 1814 (1984).Google Scholar
[17] Chik, K.P., Radiation Effects 4, 33 (1970).Google Scholar
[18] Fairfield, J.M. and Masters, B.J., J. Appl. Phys. 38, 3148 (1967).Google Scholar
[19] McVay, G.L. and DuCharme, A.R., Inst. Phys. Conf. Ser. 23, 91 (1975).Google Scholar
[20] Frank, W., Inst. Phys. Conf. Ser. 23, 23 (1975).Google Scholar