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Diffusion of Arsenic and Phosphorus in Laserprocessed-Polycrystalline-Silicon-Thin-Films

Published online by Cambridge University Press:  15 February 2011

H. Baumgart ,
H. J. Leamy ,
L. E. Trimble ,
C. J. Doherty  and
G. K. Celler
H. Baumgart
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974 USA
H. J. Leamy
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974 USA
L. E. Trimble
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974 USA
C. J. Doherty
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974 USA
G. K. Celler
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974 USA
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Abstract

Grain boundary diffusion of arsenic and phosphorus in laser processed polycrystalline Si films has been investigated. Mesa diodes were fabricated in LPCVD Si thin films on SiO2 and subsequently recrystallized by cw Ar ion laser processing to form large grain material. The diffusion length of enhanced As and P diffusion along grain boundaries intersecting the p-n junction has been measured by the EBIC technique. Quantitative experimentation allowed determination of the grain boundary diffusion coefficients of As and P in the temperature range from 900°C to 1250°C.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 5: Symposium B – Grain Boundaries in Semiconductors , 1981 , 311
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

1. Lee, K. F., Gibbons, J. F. and Saraswat, K. C. Appl. Phys. Lett. 35, (2), 173 (1979).Google Scholar
2. Kamins, T. I. and Pianetta, P. A., Elect. Dev. Lett., EDL–1, no. 10, 214 (1980).Google Scholar
3. Lam, H. W., Tasch, A. F. Jr. and Holloway, T. C., Elect. Dev. Lett., EDL–1, no. 10, 206 (1980).Google Scholar
4. Ng, K. K., Celler, G. K., Povilonis, E. J., Frye, R. C., Leamy, H. J. and Sze, S. M., IEEE Elect. Dev. Lett., EDL–2, no. 12, 316 (1981).Google Scholar
5. Frye, R. C. and Ng, K. K. in these proceedingsGoogle Scholar
6. Johnson, N. M., Biegelsen, D. K. and Moyer, M. D., Appl. Phys. Lett. 38, (11), 900 (1981).Google Scholar
7. Schimmel, D. G., J. Electrochem. Soc. 126, 479 (1980).Google Scholar
8. Kamins, T. I., Lee, K. F. and Gibbons, J. F., Appl. Phys. Lett. 36, 551 (1980).Google Scholar
9. Gupta, D., Campbell, D. R. and Ho, P. S., in: Thin Films - Interdiffusion and Reactions, (Wiley-Interscience, New York 1978) pp. 161–242.Google Scholar
10. Whipple, C. T. P., Phil. Mag. 45, 1225 (1954).CrossRefGoogle Scholar
11. Campbell, D. R., Tu, K. N. and Schwenker, R. O., Thin Solid Films, 25, 213 (1975).Google Scholar
12. Queisser, H. J., Hubner, K. and Shockley, W., Phys. Rev. vol. 123, No. 4, 1245 (1961).Google Scholar