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The Determination of the Quality of a-Si:H Films for Application in Solar Cells

Published online by Cambridge University Press:  25 February 2011

P. Grunow ,
D. Herm ,
R. Könenkamp ,
U. Küppers ,
M. Kunst ,
H. C. Neitzert  and
A. Werner
P. Grunow
Affiliation:
Hahn-Meitner- Institut, Bereich Strahlenchemie, D-1000 Berlin 39, W. Germany
D. Herm
Affiliation:
Hahn-Meitner- Institut, Bereich Strahlenchemie, D-1000 Berlin 39, W. Germany
R. Könenkamp
Affiliation:
Hahn-Meitner- Institut, Bereich Strahlenchemie, D-1000 Berlin 39, W. Germany
U. Küppers
Affiliation:
Hahn-Meitner- Institut, Bereich Strahlenchemie, D-1000 Berlin 39, W. Germany
M. Kunst
Affiliation:
Hahn-Meitner- Institut, Bereich Strahlenchemie, D-1000 Berlin 39, W. Germany
H. C. Neitzert
Affiliation:
Hahn-Meitner- Institut, Bereich Strahlenchemie, D-1000 Berlin 39, W. Germany
A. Werner
Affiliation:
Hahn-Meitner- Institut, Bereich Strahlenchemie, D-1000 Berlin 39, W. Germany
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Abstract

Several stationary and transient techniques are used to characterize a large number of intrinsic a-Si:H films prepared in a narrow range of production conditions. Correlation between stationary photoconductivity, the activation energy of the dark conductivity and the long-time range decay of the transient photoconductivity and photoinduced absorption is observed. The applicability of a-Si:H films for solar cells in view of these properties is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 363
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

[1] Brodsky, M. H., Evangelisti, F., Fischer, R., Johnson, R. W., Reuter, W., and Solomon, I., Solar Cells 2, 401 (1980)Google Scholar
[2] Werner, A. and Kunst, M., Phys. Rev. B 36, 7567 (1987)Google Scholar
[3] Tauc, J., Semiconductors and Semimetals, ed. by Pankove, J. I. (Academic, London, 1984), Vol.21b, p. 299 Google Scholar
[4] Herm, D., Ph. D. Thesis, Technical University Berlin (1989), unpublishedGoogle Scholar
[5] Amer, N. M. and Jackson, W. B., Semiconductors and Semimetals, ed. by Pankove, J. I. (Academic, London, 1984), Vol.21b, p. 83 Google Scholar
[6] Werner, A. and Kunst, M., J. Appl. Phys. 64, 211 (1988)Google Scholar
[7] Tiedje, T., Semiconductors and Semimetals, ed. by Pankove, J. I. (Academic, London, 1984), Vol.21c, p. 207 Google Scholar