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Determination of 3-Dimensional Defect Structures in Gallium Arsenide Epilayers on Silicon Using White Beam Synchrotron Radiation Topography in both Transmission and Grazing Bragg-Laue Geometry.

Published online by Cambridge University Press:  28 February 2011

M. Dudley ,
G.-D. Yao ,
J. Wu ,
H.-Y. Liu  and
Y.C. Kao
M. Dudley
Affiliation:
Dept. of Materials Science and Engineering, SUNY at Stony Brook, Stony Brook, NY, 11794.
G.-D. Yao
Affiliation:
Dept. of Materials Science and Engineering, SUNY at Stony Brook, Stony Brook, NY, 11794.
J. Wu
Affiliation:
Dept. of Materials Science and Engineering, SUNY at Stony Brook, Stony Brook, NY, 11794.
H.-Y. Liu
Affiliation:
Materials Science Laboratory, Texas Instruments Inc., P.O. Box 655936, Mail Stop 147, Dallas, TX 75265.
Y.C. Kao
Affiliation:
Materials Science Laboratory, Texas Instruments Inc., P.O. Box 655936, Mail Stop 147, Dallas, TX 75265.
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Abstract

White beam synchrotron topography in both transmission and grazing Bragg-Laue geometries has been used to reveal the 3-dimensional defect structure in MBE grown GaAs epilayers on Si. Defects observed and characterized include substrate threading dislocations and interfacial dislocations. Dislocation line direction and Burgers vector analysis was performed on transmission topographs. The relationship between substrate threading dislocations and interfacial dislocations was established. In the grazing Bragg-Laue case, manipulation of geometry enabled depth profiling of defect structures in the epilayer. The position of the interfacial dislocations was verified by correlating penetration depth analysis with the visibility of the dislocations under different diffraction conditions.

This technique affords a rapid and non-destructive way of quantitatively characterizing processing induced damage in such systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 469
Copyright
Copyright © Materials Research Society 1990

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