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Detailed Study of Electromigration Induced Damage in Al and AlCuSi Interconnects

Published online by Cambridge University Press:  22 February 2011

U.E. Möckl ,
M. Bauer ,
O. Kraft ,
J.E. Sanchez Jr  and
E. Arzt
U.E. Möckl
Affiliation:
Advanced Micro Devices, Sunnyvale, CA
M. Bauer
Affiliation:
Advanced Micro Devices, Sunnyvale, CA
O. Kraft
Affiliation:
Advanced Micro Devices, Sunnyvale, CA
J.E. Sanchez Jr
Affiliation:
Max-Planck-Institut für Metallforschung and Institut für Metallkunde, University of Stuttgart, Stuttgart, Germany
E. Arzt
Affiliation:
Max-Planck-Institut für Metallforschung and Institut für Metallkunde, University of Stuttgart, Stuttgart, Germany
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Abstract

Because of the continuing miniaturization, electromigration (EM) phenomena are still a key issue in reliability of VLSI metallizations. The present study of EM induced voiding and hillocking was performed on unpassivated conductor lines with various widths and current densities. Stressed and unstressed interconnects were carefully examined with SEM and TEM techniques, especially with regard to void densities, void sizes and characteristic lengths between void and hillock. The fatal void shape was related to current density and line width indicating that the failure mechanism changes with decreasing line width and decreasing current density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994 , 373
Copyright
Copyright © Materials Research Society 1994

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References

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