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Detailed Photoluminescence Studies of Heat-Treated InP

Published online by Cambridge University Press:  03 September 2012

Klaus Pressel ,
C. Hiller ,
G. Bohnert ,
F. Prinz  and
A. Dörnen
Klaus Pressel
Affiliation:
4. Physikal. Institut, Universität Stuttgart, 7000 Stuttgart 80, Germany
C. Hiller
Affiliation:
4. Physikal. Institut, Universität Stuttgart, 7000 Stuttgart 80, Germany
G. Bohnert
Affiliation:
4. Physikal. Institut, Universität Stuttgart, 7000 Stuttgart 80, Germany
F. Prinz
Affiliation:
4. Physikal. Institut, Universität Stuttgart, 7000 Stuttgart 80, Germany
A. Dörnen
Affiliation:
4. Physikal. Institut, Universität Stuttgart, 7000 Stuttgart 80, Germany
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Abstract

We present highly resolved photoluminescence studies on heat-treated nominally undoped InP, which was either unprotected or protected by SiO2 or Si3N4 caps during the annealing procedures. Annealing of InP above 350°C leads to six different sharp emissions in the wavelength range between 8790 and 8900 Å, which are not observed at 4 K in Zn-doped or Fe-doped samples. Based on temperature-dependent photoluminescence studies, time-resolved measurements and preliminary magnetic field studies we ascribe these emissions to isoelectronic bound exciton transitions. It is also shown that the two emissions at 8883 Å (11254 cm-1) (E) and 8889 Å (11246 cm-1) (F) belong to one center. We observe that the lines not only depend on the heat treatment but also on some unintentionally incorporated or residual impurities of a low concentration level. Possible candidates are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 695
Copyright
Copyright © Materials Research Society 1992

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References

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