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Depth Profile of the Excitonic Luminescence in Gallium-Nitride Layers

Published online by Cambridge University Press:  10 February 2011

H. Siegle ,
A. Hoffmann ,
L. Eckey ,
C. Thomsen ,
T. Detchprohm ,
K. Hiramatsu ,
T. Davis  and
J. W. Steeds
H. Siegle
Affiliation:
Institut für Festkörperphysik, TU Berlin, HardenbergstraÖe 36, 10623 Berlin, Germany
A. Hoffmann
Affiliation:
Institut für Festkörperphysik, TU Berlin, HardenbergstraÖe 36, 10623 Berlin, Germany
L. Eckey
Affiliation:
Institut für Festkörperphysik, TU Berlin, HardenbergstraÖe 36, 10623 Berlin, Germany
C. Thomsen
Affiliation:
Institut für Festkörperphysik, TU Berlin, HardenbergstraÖe 36, 10623 Berlin, Germany
T. Detchprohm
Affiliation:
Department of Electronics, Nagoya University, Nagoya 468–01, Japan
K. Hiramatsu
Affiliation:
Department of Electronics, Nagoya University, Nagoya 468–01, Japan
T. Davis
Affiliation:
H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 ITL, UK
J. W. Steeds
Affiliation:
H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 ITL, UK
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Abstract

We present results of spatially-resolved photoluminescence and Raman measurements on a 200 μm thick GaN layer grown on sapphire by hydride vapor phase epitaxy. Our microphotoluminescence measurements reveal that the peak position of the excitonic and donoracceptor-pair transitions strongly depends on the distance to the substrate interface. We observed a strong blue shift near the interface and discuss the influence of strain, which we quantified by micro-Raman experiments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 677
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

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