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Deposition Of Uniform Size Metallic Nanoparticles For Use In Non Volatile Memories

Published online by Cambridge University Press:  01 February 2011

Emanuele Verrelli ,
Dimitris Tsoukalas ,
Konstantinos Giannakopoulos  and
Dimitris Ioannou
Emanuele Verrelli
Affiliation:
verrelli@central.ntua.gr, National Technical University of Athens, Applied Physics and Mathematics, Heroon Polytechniou Str. 9, Zographou Campus, Athens, 15773, Greece, 0030 210 772 1679, 0030 210 772 3338
Dimitris Tsoukalas
Affiliation:
dtsouk@central.ntua.gr, National Technical University of Athens, Applied Physics and Mathematics, Heroon Polytechniou Str. 9, Zographou Campus, Athens, 15773, Greece
Konstantinos Giannakopoulos
Affiliation:
kyann@ims.demokritos.gr, NCSR Demokritos, Material Sciences, Aghia Paraskevi, 15310, Greece
Dimitris Ioannou
Affiliation:
dioannou@gmu.edu, George Mason University, Electrical Engineering, Fairfax, VA, 22030, United States
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Abstract

In this work we investigate the non-volatile memory behavior of Ni nanoparticles embedded within an insulating matrix. Nickel nanoparticles are deposited at room temperature by a new high-vacuum technique over a 4 nm tunneling thermal SiO2 layer followed by the deposition of HfO2 as a control insulator. Memory windows of ∼1.5V are observed in MOS capacitors at gate pulse voltages of 8V. Charge retention for write and erase state clearly indicate long time charge storage behavior.

Keywords

memoryphysical vapor deposition (PVD)Ni

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I03-08
Copyright
Copyright © Materials Research Society 2007

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References

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