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Deposition of Thin Insulating films by Plasma Enhanced CVD

Published online by Cambridge University Press:  26 February 2011

G. Lucovsky ,
P. D. Richard ,
D. V. Tsu  and
R. J. Markunas
G. Lucovsky
Affiliation:
Department of Physics, North Carolina State University, Raleigh, North Carolina 27695–8202
P. D. Richard
Affiliation:
Department of Physics, North Carolina State University, Raleigh, North Carolina 27695–8202
D. V. Tsu
Affiliation:
Department of Physics, North Carolina State University, Raleigh, North Carolina 27695–8202
R. J. Markunas
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709
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Abstract

We discuss a new low temperature process for the deposition of electronic quality thin films of silicon oxide and nitride. In contrast to conventional plasma enhanced chemical vapor deposition [PECVD], this process involves the remote excitation of one of the gas reactants followed by the extraction of the active species out of the plasma region where they react to generate precursor molecules. The precursors undergo a CVD reaction at a heated substrate to form the desired thin film. The process is called remote PECVD [RPECVD]. Insulators produced in this way show significant reductions in the incorporation of impurity groups such as SiH and SiOH relative to films grown by the PECVD process at the same substrate temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54 , 1985 , 529
Copyright
Copyright © Materials Research Society 1986

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References

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