Hostname: page-component-745bb68f8f-cphqk Total loading time: 0 Render date: 2025-02-10T12:15:02.905Z Has data issue: false hasContentIssue false
  • English
  • Français

Deposition of Heavily-Doped μc-Silicon Thin Films by Remote Plasma-Enhanced Chemical-Vapor Deposition Process (remote PECVD)

Published online by Cambridge University Press:  25 February 2011

C. Wang ,
C.H. Bjorkman ,
D.R. Lee ,
M.J. Williams  and
G. Lucovsky
C. Wang
Affiliation:
Department of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
C.H. Bjorkman
Affiliation:
Department of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
D.R. Lee
Affiliation:
Department of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
M.J. Williams
Affiliation:
Department of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
G. Lucovsky
Affiliation:
Department of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
Get access

Abstract

We have succeeded in depositing both activated n- and p-type μc-Si, by a low temperature, 250°C, remote PECVD process in which dopant gases (PH3 or B2H6)/Silane (SiH4) mixtures are injected downstream from the exit port of a He/H2 plasma. The room temperature conductivities and activation energies for the n- and p-type μc-Si are respectively, 40 S/cm with Eaa=0.018 eV, and 5 S/cm with Ea =0.040 eV. Doped μc-Si is obtained for PH3/SiH4 ratios up to 1%, and for B2H6/SiH4 ratios to 0.1%. For B2H6/SiH4 ratios < 0.1%, the deposited p-type material is doped a-Si rather than doped μc-Si. We have shown that these heavily doped μc-Si film are a viable candidate for the gate electrode in MOS devices. The application of these doped μc-Si films in p-i-n diode devices has also been studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 277
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Wang, C., Williams, M.J. and Lucovsky, G., presented at the 37th Annual AVS Nat. Syrup. Toronto, Canada, October, 1990; to be published in J. Vac. Sci. Technol A, 1991.Google Scholar
2. Parsons, G.N., Tsu, D.V. and Lucovsky, G., J. Vac. Sci. Technol., A6, 1912 (1984).Google Scholar
3. Wang, C., Parsons, G.N., Buehler, E.C., Nemanich, R.J. and Lucovsky, G.. MRS Symp. Proc. 192 (1990), in press.Google Scholar
4. Spear, W.E., Willeke, G. and LeComber, P.G., Physica 117B&118B, 908 (1983).Google Scholar
5. Wang, C. and Lucovsky, G., Proc. of 21st IEEE Photovoltaic Specialists Conference, 1614 (1990).Google Scholar
6. Lucovsky, G., Wang, C., Williams, M.J. and Nemanich, R.J., Solar Cells, 1990 (in press).Google Scholar
7. Bjorkman, C.H, Lee, D.R. and Lucovsky, G.. MRS Symp Prec. Fall Meeting, Symposium C.Google Scholar