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Deposition of Epitaxially Oriented Films of Cubic SiC on Silicon by Laser Ablation of Elemental Targets.

Published online by Cambridge University Press:  21 February 2011

L. Rimai ,
R. Ager ,
W. H. Weber ,
J. Hangas  and
B. D. Poindexter
L. Rimai
Affiliation:
Ford Research Laboratory, P.O. Box 2053 MD3028, Dearborn MI48121–2053
R. Ager
Affiliation:
Ford Research Laboratory, P.O. Box 2053 MD3028, Dearborn MI48121–2053
W. H. Weber
Affiliation:
Ford Research Laboratory, P.O. Box 2053 MD3028, Dearborn MI48121–2053
J. Hangas
Affiliation:
Ford Research Laboratory, P.O. Box 2053 MD3028, Dearborn MI48121–2053
B. D. Poindexter
Affiliation:
Ford Research Laboratory, P.O. Box 2053 MD3028, Dearborn MI48121–2053
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Abstract

Silicon carbide films are grown epitaxially on crystalline silicon substrates heated above 1000 °C, by laser ablation of pure carbon targets to thicknesses between 300 and 400 nm. These films grow on top of the silicon substrate from the carbon in the ablation plume and from the silicon of the substrate. By using a method of alternate ablation of a pure carbon and a pure silicon target, similar epitaxial films can be grown to thicknesses in excess of 1 μm with part of the silicon being supplied by the ablation plume of the silicon target.

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References

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